NGTB15N60S1EG, БТИЗ транзистор, 30 А, 1.5 В, 117 Вт, 600 В

140,00 ₽

Артикул: 9ee547d1429c Категория:

      Описание

      NGTB15N60S1EG, БТИЗ транзистор, 30 А, 1.5 В, 117 Вт, 600 В The NGTB15N60S1EG is an Insulated Gate Bipolar Transistor features a robust and non-punch through (NPT) Trench construction, provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for hard switching applications. Incorporated into the device is a rugged co-packaged reverse recovery diode with a low forward voltage.

      • Low saturation voltage resulting in low conduction loss
      • Low switching loss in higher frequency applications
      • Soft fast reverse recovery diode
      • Excellent current versus package size performance density
      • 5µs Short-circuit capability

      Полупроводники — ДискретныеТранзисторыБТИЗ Одиночные

      Детали
      Бренд

      ON SEMICONDUCTOR
      Максимальная Рабочая Температура

      150 C
      Количество Выводов

      3вывод(-ов)
      Напряжение Коллектор-Эмиттер

      600в
      Стандарт Корпуса Транзистора

      to-220
      Рассеиваемая Мощность

      117Вт
      DC Ток Коллектора

      30а