IKW25T120FKSA1, БТИЗ транзистор, универсальный, 50 А, 2.2 В

IKW25T120FKSA1, БТИЗ транзистор, универсальный, 50 А, 2.2 В The IKW25T120 is a Low Loss IGBT in TrenchStop® and field-stop technology with soft, fast recovery anti-parallel emitter controlled HE diode. The TrenchStop® IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of TrenchStop®-cell and field-stop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-ON losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

• Lowest Vce (sat) drop for lower conduction losses
• Low switching losses
• Easy parallel switching capability due to positive temperature coefficient in Vce (sat)
• Very soft, fast recovery anti-parallel emitter controlled HE diode
• High ruggedness, temperature stable behaviour
• Low EMI emissions
• Low gate charge
• Very tight parameter distribution
• Highest efficiency — Low conduction and switching losses
• High device reliability
• 10µs Short-circuit withstand time

Полупроводники — ДискретныеТранзисторыБТИЗ Одиночные